Effects of C+ Implantation on Tribological Behavior of Three Metallic Thin Films on Silicon Dioxide Substrate

The effect of C implantation on the hardness, bonding strength at interface and tribological properties of Ti, Al, and Ag films on SiO 2 was investigated. Findings indicated that the hardness and the bonding strength at the interface were increased by C implantation and the tribological properties were improved accordingly. The improvement in the bonding strength at the interface was mainly attributed to the interfacial mixing. In other words, carbide eutectics were generated near the interface after C implantation of the metallic thin film/SiO 2 systems, subsequently the bonding strength of the film to the substrate was increased, and hence the wear-resistance of the thin films extended as well.